stn4 stn4 stn4 stn4 822 822 822 822 dual n channel enhancement mode mosfet 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 82 2 200 9 . v1 description description description description stn 4 822 is the dual n-channel logic enhancement mode power field effect transistors which are produced using high cell density dmos trench technology. it is suitable for the power management applications in the portable or battery powered system. pin pin pin pin configuration configuration configuration configuration sop-8 sop-8 sop-8 sop-8 part part part part marking marking marking marking sop-8 sop-8 sop-8 sop-8 y:year y:year y:year y:year code code code code a: a: a: a: process process process process code code code code feature feature feature feature ? 3 0v/ 8 . 5 a, r ds(on) = 16 m (typ.) @vgs = 10 v ? 3 0v/ 6. 6 a, r ds(on) = 26 m @vgs = 4 .5v ? super high density cell design for extremely low r ds(on) ? exceptional on-resistance and maximum dc current capability ? sop-8 package design
stn4 stn4 stn4 stn4 822 822 822 822 dual n channel enhancement mode mosfet 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 82 2 200 9 . v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical unit unit unit unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (tj=150 ) t a =25 t a =70 i d 8.5 6. 6 a pulsed drain current i dm 3 0 a continuous source current (diode conduction) i s 3.0 a power dissipation t a =25 t a =70 p d 2. 0 1. 2 8 w operation junction temperature t j -55/150 storgae temperature range t stg -55/150 thermal resistance-junction to ambient r ja 48 /w
stn4 stn4 stn4 stn4 822 822 822 822 dual n channel enhancement mode mosfet 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 82 2 200 9 . v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 30 v gate threshold voltage v gs(th) v ds =v gs ,i d =250 ua 1.0 1.8 3.0 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss t j =55 v ds = 24 v,v gs =0v 1 ua v ds = 24 v,v gs =0v 5 on-state drain current i d(on) v ds 10 v,v gs =5v 3 0 0 a drain-source on-resistance r ds(on) v gs = 10v, i d = 8.5 a v gs =4 .5v, i d =6. 6 a 13 2 0 1 7 2 6 m forward tran conductance g fs v ds =5.0v,i d = 8.5 a 2 3 s diode forward voltage v sd i s = 1.0 a,v gs =0v 0. 76 1. 0 v dynamic dynamic dynamic dynamic total gate charge q g v ds =15v,v gs =10v i d = 8.5 a 1 5 23 nc gate-source charge q gs 2.6 gate-drain charge q gd 2.78 input capacitance ciss v d s = 15.0 v, v g s =0v f=1mhz 805 1 20 0 pf output capacitance coss 145 reverse transfer c apacitance crss 11 2 turn-on time t d(on) tr v d s =15v,r l =1 .8 i d =1a,v gen =10v r g = 3 5.2 6 .5 ns 6 7 .5 turn-off time t d(off) tf 1 9 .3 25 4 .3 6
stn4 stn4 stn4 stn4 822 822 822 822 dual n channel enhancement mode mosfet 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 82 2 200 9 . v1 typical typical typical typical characterictics characterictics characterictics characterictics ( 25 unless note )
stn4 stn4 stn4 stn4 822 822 822 822 dual n channel enhancement mode mosfet 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 82 2 200 9 . v1 typical typical typical typical characterictics characterictics characterictics characterictics ( 25 unless note )
stn4 stn4 stn4 stn4 822 822 822 822 dual n channel enhancement mode mosfet 8 . 5 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com copyright ? 2007, stanson corp. stn4 82 2 200 9 . v1 sop-8 sop-8 sop-8 sop-8 package package package package outline outline outline outline
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